海外真空メーカーの日本総代理店　株式会社テクノポート

DESCRIPTION

The IS 40E1 Ion Source is a two lens, extractor type, focused, differentially pumped ion gun. The source is able to raster a 10 mm x 10 mm area of the surface at the recommended working distance. It is particularly suitable for depth profiling in XPS, ISS and SIMS. The source can be also used for sample surface cleaning.

FEATURES

• Specially configured nose cone
• Operation with inert (Ar) & reactive gases (O2, H2, hydrocarbons with reduced lifetime)
• Continuously variable spot size
• Onside replaceable filament
• UHV gas inlet
• UHV conditions maintained in chamber
• Integrated scan and deflection unit
• Correction of incident electron beam angle (provided by IS40-PS power supply)

OPTIONS

• Wien mass filter
• Gas dosing system
• Linear shift: 25, 50, 75, 100 mm
• Differential pumping (2 stages)

TECHNICAL DATA

Mounting flange 　　　　DN 40 CF (rotatable)

Gases 　　　　　　　　　Ar and reactive gases (O2, H2 hydro-carbons with reduced lifetime)

Energy range     　　　       0.15 keV – 5 keV

Scan area          　　　　     10 mm × 10 mm (for distance of 23mm)

Current density      　　　    up to 4 mA/cm2 (for distance 23 mm)

Beam current      　　　      > 1 μA (for distance 23 mm)

Cathode type     　　　      yttrium oxide coated iridium

Small cone angle    　　    50°

In vacuum side    　　　      no magnetic parts

Insertion length       　　   163 mm; OD: 34 mm

Beam diameter 　　　     dependent on working distance

(FWHM)             　　　　   (e.g. < 150 μm for distance 23 mm)

Typical working 　　　    23 – 120 mm

distance

Bakeout temperature  　   up to 250 °C

Working pressure      　　  10-8 mbar (with max beam current)