海外真空メーカーの日本総代理店　株式会社テクノポート

DESCRIPTION

The HEAT3-PS is used for resistive heating or electron bombardment heating. The power supply can also be used for effusion cell evaporators. The unit is equipped with a PID temperature controller.
Ramp heating function control sample temperature to protect sample from damage. Sample overheating can also be protected by setting the voltage and current limits. The unit can be operated in auto mode (with temperature control) or manual mode (without temperature control).

FEATURES

• Dual heating mode: resistive and electron bombardment
• Wide range temperature measurement  (1.4 – 2473.15 K)
• 2D real time chart module (option)
• High efficiency
• Setpoint based over-voltage and over-current output protection
• Fully manual or PID temperature controlled (by setpoint and ramp)
• Process temperature control with built-in PID controller (with autotuning function for optimized process PID parameters)
• Various kind of temperature sensors: thermocouples K/C/ E/N (other on request), Pt, diode
• Multiple I/O (10 digital/4 analog) – individual reprogrammable
• High resolution (16-bit analog I/O, 0.1 K temp.)
• One vacuum channel for active gauges
• Mobile solutions for remote access and control
• Customised menu options (for robust and effectivity)
• Support (easy firmware update via USB)

APPLICATION

• Any thermal process according to the specifications ▪ Effusion cells supply
• Sample holders heating
• Thermal monitorin

OPTIONS

• Second DC module available: two resistive heating zones with independent control, or one resistive heating zone with higher output power (90V, 17A or 45V, 30A)
• Software control (Version Pro, Extended or Library Module)
• Analog I/O card for vacuum measurement (1 gauge)

TECHNICAL DATA

Supply voltage   　　　　   100-130VAC/200-260 VAC, 50-60Hz (power consumption max 1600 W)

Resistive heating    　　　　 45 V, 17 A – standard;

mode parameters 　　　　   other versions on request

EB heating       　　　　　    1000 V, 300 mA – standard;

mode parameters  　　　  other versions on request

Temperature     　　　　   ▪ 273.15 K – 2473.15 K for type C thermocouple

range       　　　　　        (dependent on sample holder type or evaporator)
▪ 73.15 K – 1645.15 K for type K thermocouple
▪ 1.4 K – 500 K for DT670/DT470 silicon diodes
(dependent on sample holder type and conditions in chamber)

Temperature  　　　　　      2 – for thermocouples K/C/E/N

independent      　　　　　  2 – for silicon diodes DT670/DT470

inputs

Temperature   　　　　　     adjustable from 0.1° to 1000°/ s/min/h
setpoint ramp rate

ΔT setpoint      　　　　　    0.1 to 5.0°/s

Vacuum        　　　　　　   CTR90, TTR91, TTR211, PTR225, PTR90, ITR90,

measurement     　　　　  ITR100, Baratron, ANALOG IN, PG105,

(optional)       　　　　　    MG13/14, PKR251, PCR280, ATMION

Communication  　　　　   RS232/485, Ethernet

interface

Communication  　　　　   MODBUS-TCP

protocol

User interface    　　　　    7″ TFT display with touchscreen,digital encoder

Interface          　　　　　  English, German, Polish

languages

Dimensions     　　　　     448.8 × 132.5 × 375 mm (W×H×D),19″ rack mountable

Weight (approx.)     　　　  8.8 kg (for standard version)